Lasers

With over 40 years of expertise in the Optoelectronics industry, Sarnoff has a sophisticated understanding of demanding system, subsystem and component problems. We exploit this knowledge to provide technical solutions that address these challenging issues. Sarnoff’s products focus on devices operating in the 700nm to 3300nm regime. With proficiency in designing, growing, processing and characterizing high-performance GaAs, InP, GaSb lasers and detectors, we have a unique perspective and product base to offer our government and commercial clients.

Custom Wavelength DFB Diode Lasers

Sarnoff’s distributed feedback (DFB) diode lasers are used in a wide variety of applications that require stable, single-frequency laser sources at unique wavelengths, such as: trace gas sensing, water-vapor sensing, medical sensing, interferometry, metrology and solid-state laser seeding. We are able to custom-design single-wavelength lasers to operate at almost any wavelength in the near-IR up to 2100nm—lasers can be tuned via temperature and current to precise wavelengths.

III-V Foundry:  Epitaxial MOCVD Growth and Wafer Processing Services

Sarnoff provides a unique foundry service designed to meet demanding customer-specific needs.  Sarnoff’s dedicated III-V wafer foundry includes expert MOCVD materials design and epitaxial growth for a variety of customer-defined wafer structures, as well as wafer processing services for fabrication of custom devices.

High quality epi-growth includes such III-V material systems as InP, GaAs and GaSb within a production-level reactor. This epitaxial-growth reactor has large wafer capacity (6 x 2” diameter, 3 x 3” diameter, 1 x 4” or 1 x 6” diameter) as well as excellent uniformity, advanced in-situ monitoring for improved reproducibility and materials flexibility due to multiple sources and double dilution networks.  This system has been used for the epitaxial growth of a large number of advanced III-V structures including low dark-current p-i-n detectors, high power laser emitters, DFB lasers operating from 750 nm to 2100 nm, quantum cascade devices, low-threshold VCSELs, and thermophotovoltaic cells. Further, this system has been used for foundry growth of III-V materials on Si as well as other non III-V substrates. Foundry includes in-house material characterization tools such as double-crystal x-ray diffraction, mapping photoluminescence, Hall effect, field-emission scanning electron microscopy, and electrochemical C-V profiling.

Sarnoff’s dedicated III-V optoelectronic processing and fabrication facility includes Class 100, 1,000 and 10,000 clean-rooms for photolithography, diffusion, metallization, dielectric deposition, plasma etching. Additionally, the wafer processing foundry includes holographic grating formation.